Description
Very low forward voltage drop: This feature indicates that the diode has a low voltage drop when it is conducting, which can help reduce power loss and improve efficiency in rectification applications.
150 °C max. operating junction temperature: This specifies the maximum temperature at which the diode can operate without failing. It is designed to handle high-temperature conditions, making it suitable for applications in harsh environments.
Rectifier diode: The VS-80APS12-M3 is specifically designed for rectification purposes, meaning it is intended to convert AC (alternating current) to DC (direct current).
1 Phase, 1 Element, 80A, 1200V V(RRM): This indicates that the diode is rated for a maximum current of 80 A and a maximum reverse voltage of 1200 V. It is suitable for high-power rectification applications.
Silicon construction: The diode is made from silicon, which is a common material for semiconductor devices due to its reliability and performance.
150 °C max. operating junction temperature: This specifies the maximum temperature at which the diode can operate without failing. It is designed to handle high-temperature conditions, making it suitable for applications in harsh environments.
Rectifier diode: The VS-80APS12-M3 is specifically designed for rectification purposes, meaning it is intended to convert AC (alternating current) to DC (direct current).
1 Phase, 1 Element, 80A, 1200V V(RRM): This indicates that the diode is rated for a maximum current of 80 A and a maximum reverse voltage of 1200 V. It is suitable for high-power rectification applications.
Silicon construction: The diode is made from silicon, which is a common material for semiconductor devices due to its reliability and performance.
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